The determination of physics-based HBT model parameters is necessary not only to provide meaningful feedback to process development but also to enable circuit optimization through device sizing. Regardless of the process technology (bipolar or MOS), physics-based scalable compact transistor models require a special parameter determination methodology (and infrastructure) in order to separate the various often competing physical effects from each other.

Model parameters can be determined efficiently from a suitable set of test structures that goes beyond just transistors. One of the goals of the DOTFIVE project is to achieve a set of test structures common to each fabrication partner.

In order to enable experimental HF characterization and model verification up to 220GHz it is necessary to  identify and to solve the main issues related to S-parameter measurements beyond 110GHz. Dedicated de-embedding structures and calibration techniques will be investigated and tested with the help and recommendations of the WP4 partners involved in h.f. measurements.

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Paulius Sakalas graduated in 1983 at Vilnius University, Department of Physics and Mathematics and then joined Institute of Semiconductor Physics of Lithuanian Academy of Sciences, where he worked on high Frequency noise in GaAs and InP semiconductors and devices, and received his Ph.D. in 1990. He was a post-doc at the Eindhoven Technical University in the Netherlands (1991) as well as a visiting scientist at Chalmers University of Technology in Gothenburg, Sweden (1996/97, 1999/00) and at CNET of France Telecom (1997/98). Since 2000 he has been with the Chair of Electron Devices and Integrated Circuits at Dresden University of Technology, where he has been in charge of building the existing high-frequency measurement laboratory. He is also a head physician in Fluctuation Phenomena Laboratory in Vilnius, where he worked within SINANO European Framework.

Michael Schröter received the Dipl.-Ing. and Dr.-Ing. degrees in electrical engineering and the ”venia legendi” on semiconductor devices in 1982, 1988, and 1994, respectively, from the Ruhr-University Bochum (RUB), Germany.  From 1993 to 1996 he was with Nortel and Bell Northern Research, Ottawa (Canada), first as senior member of Scientific Staff and later as Team Leader and Advisor, continuing the bipolar transistor modeling and parameter extraction activities. During 1994 to 1996, he was also Adjunct Professor at the Carleton University, Ottawa. In 1996, he joined Rockwell Semiconductor Systems, Newport Beach (CA), as a Manager, where he established the RF Device Modeling Group and was responsible for modeling (Si, SiGe, AlGaAs) bipolar transistors, MOS transistors and integrated passive devices with emphasis on high-frequency process technologies and applications. In 1999, Dr. Schröter was appointed Full Professor as the Chair for Electron Devices and Integrated Circuits at Dresden University of Technology, Germany. He is also on the Technical Advisory Board of RFMagic, a communications circuit design company in San Diego, CA.

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