Dotfive
Structure de mise en forme 2 colonnes

General description

The Technische Universität Dresden dates back to the Technische Bildungsanstalt Dresden, founded in 1828 and, thus, ranks among the oldest academic education establishments in Germany. The Chair for Electron Devices and Integrated Circuits (CEDIC) represents an internationally leading research group in the area of compact device modeling for high-speed/high-frequency applications. The modeling effort includes also the development of model parameter extraction methods and their experimental application for model verification, as well as the design of adequate test structures. The compact bipolar transistor model HICUM, which has been developed over the past 20 years, has become an industry standard and has been available in many commercial circuit simulators since 2004. Many SiGe-BiCMOS foundries have been providing HICUM in their design kits. Further activities include the modeling of electro-thermal effects, distributed electrical effects, high-frequency noise, high-frequency distortion in Si/SiGe and III/V heterojunction bipolar transistors as well as in MOS transistors, and also the development of statistical simulation and device simulation methods and tools. Modeling work is supported by a state-of-the-art characterization lab containing, e.g., a high-frequency probe station with temperature chamber, load-pull equipment up to 50GHz. Also, a pulsed 110GHz VNA for iso-thermal HF measurements will be available by the end of 2008.

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Role/activity in the project

The determination of physics-based HBT model parameters is necessary not only to provide meaningful feedback to process development but also to enable circuit optimization through device sizing. Regardless of the process technology (bipolar or MOS), physics-based scalable compact transistor models require a special parameter determination methodology (and infrastructure) in order to separate the various often competing physical effects from each other.


Model parameters can be determined efficiently from a suitable set of test structures that goes beyond just transistors. One of the goals of the DOTFIVE project is to achieve a set of test structures common to each fabrication partner.


In order to enable experimental HF characterization and model verification up to 220GHz it is necessary to  identify and to solve the main issues related to S-parameter measurements beyond 110GHz. Dedicated de-embedding structures and calibration techniques will be investigated and tested with the help and recommendations of the WP4 partners involved in h.f. measurements.

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People involved in the project

Paulius Sakalas graduated in 1983 at Vilnius University, Department of Physics and Mathematics and then joined Institute of Semiconductor Physics of Lithuanian Academy of Sciences, where he worked on high Frequency noise in GaAs and InP semiconductors and devices, and received his Ph.D. in 1990. He was a post-doc at the Eindhoven Technical University in the Netherlands (1991) as well as a visiting scientist at Chalmers University of Technology in Gothenburg, Sweden (1996/97, 1999/00) and at CNET of France Telecom (1997/98). Since 2000 he has been with the Chair of Electron Devices and Integrated Circuits at Dresden University of Technology, where he has been in charge of building the existing high-frequency measurement laboratory. He is also a head physician in Fluctuation Phenomena Laboratory in Vilnius, where he worked within SINANO European Framework.

 

Michael Schröter received the Dipl.-Ing. and Dr.-Ing. degrees in electrical engineering and the ”venia legendi” on semiconductor devices in 1982, 1988, and 1994, respectively, from the Ruhr-University Bochum (RUB), Germany.  From 1993 to 1996 he was with Nortel and Bell Northern Research, Ottawa (Canada), first as senior member of Scientific Staff and later as Team Leader and Advisor, continuing the bipolar transistor modeling and parameter extraction activities. During 1994 to 1996, he was also Adjunct Professor at the Carleton University, Ottawa. In 1996, he joined Rockwell Semiconductor Systems, Newport Beach (CA), as a Manager, where he established the RF Device Modeling Group and was responsible for modeling (Si, SiGe, AlGaAs) bipolar transistors, MOS transistors and integrated passive devices with emphasis on high-frequency process technologies and applications. In 1999, Dr. Schröter was appointed Full Professor as the Chair for Electron Devices and Integrated Circuits at Dresden University of Technology, Germany. He is also on the Technical Advisory Board of RFMagic, a communications circuit design company in San Diego, CA.

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