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General description

The Institute of Microelectronics and Circuit Design is part of the faculty of Electrical Engineering and Information Technology of the Bundeswehr University Munich. The group works on electron transport and noise based on the Boltzmann equation, which gives the most detailed microscopic picture within the semi-classical framework. It develops stochastic (Monte Carlo) and deterministic (Spherical Harmonics Expansion) methods, which are applied to SiGe HBTs and generally strained MOSFETs. The simulation tools are used to investigate transport and noise in those devices and to improve the classical simulation tools (drift-diffusion and hydrodynamic models). The classical simulation tools are used to get a better understanding of devices like the IMOS or Tunnel FET. In addition, the group works on magnetotransport.  

Role/activity in the project

The Boltzmann solvers are used to generate transport and noise parameters for the classical device models and reference data for assessment of the accuracy of the latter models. In addition, exemplary simulations of SiGe HBTs will be performed to investigate the physics of transport and to understand the effects limiting the speed of the internal transistor based on the very detailed information on the electron distribution within phase space.

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People involved in the project


Christoph. Jungemann (Dr.-Ing. degree of electrical engineering in 1995, RWTH Aachen) holds the chair for Microelectronics at the Bundeswehr University. He developed the first full-band Monte Carlo device simulator for SiGe HBTs and numerical methods for the solution of the Langevin-Boltzmann equation. He is a member of the editorial board of the IEEE Transaction on Electron Devices and a recipient of the IEEE EDS Paul-Rappaport-Award for 2005. He was a program committee member of IEDM, ICCAD, and IWCE

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Contact

Prof. Dr. Christoph Jungemann

Institut fuer Mikroelektronik und Schaltungstechnik (EIT4.1)

 Bundeswehr University

Werner-Heisenberg-Weg 39

D-85577 Neubiberg

+49 89 6004 3735

Fax: +49 89 6004 2223



Gregor Matz (Dipl.-Ing. degree in 2008, Bundeswehr University) He studied mathematical engineering and did his master thesis on coupled drift-diffusion and Monte Carlo simulation of silicon devices. The master thesis was a collaboration between the Bundeswehr University and the Peking University (Institute for Microelectronics).

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Recent publication

S. M. Hong, C. Jungemann, “Deterministic Simulation of SiGe HBTs Based on the Boltzmann Equation”, to be presented at ESSDERC 2008.