01. Performance and safe operating limits of SiGe HBTs (Nicolo Rinaldi - University of Naples) 02. Advanced Si/SiGe epitaxial deposition processes for ultra high speed SiGe HBTs (Herbert Schaefer – Infineon) 03. Profile engineering for high speed BiCMOS (Stefaan Decoutere - IMEC)
04. De-embedding methods: getting rid of back-end parasitics (Thomas Zimmer – IMS Bordeaux) 05. Circuit building blocks for future 0.5 THz silicon technologies (Ullrich Pfeiffer - University of Wuppertal)
01. THz SiGe: C HBT TCAD simulation (Niccolò Rinaldi, University of Naples)
02. THz SiGe: C HBT TCAD simulation (Arturo Sibaja-Hernandez Imec)
03. Present achievements with SiGe HBT technology in DOTFIVE (Thomas Meister, Infineon)
04. Architecture choices for high-speed BiCMOS (Bernd Heinemann, IHP)
05. Essentials of HiCuM model parameter extraction (Thomas Zimmer, IMS Bordeaux)
06. Advance HiCuM model parameter extraction (Bertrand Ardouin, IMS Bordeaux)
07. 0.5 THz silicon technologies for advanced radar applications (Martin Jahn, JKU, Linz)
