01. Physics based device simulation (Christoph Jungemann - Bundeswehr University München)
02. SiGe HBT processes: overview on present state-of-the-art and future trends(Pascal Chevalier - STMicroelectronics)
03. Advanced isolation in high-speed BiCMOS(Stefaan Decoutere - IMEC)
04. SiGe HBT model parameter prediction from TCAD simulation(Michael Schröter - TU Dresden)
05. Advanced circuits and systems for future THz applications (Ullrich Pfeiffer - University of Wuppertal)
01. Performance and safe operating limits of SiGe HBTs (Nicolo Rinaldi - University of Naples) 02. Advanced Si/SiGe epitaxial deposition processes for ultra high speed SiGe HBTs (Herbert Schaefer – Infineon) 03. Profile engineering for high speed BiCMOS (Stefaan Decoutere - IMEC)
04. De-embedding methods: getting rid of back-end parasitics (Thomas Zimmer – IMS Bordeaux) 05. Circuit building blocks for future 0.5 THz silicon technologies (Ullrich Pfeiffer - University of Wuppertal)
