- G. Sasso, G. Matz, C. Jungemann, and N. Rinaldi, “Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation,” accepted at SISPAD 2009, San Diego, CA
- S.-M. Hong and C. Jungemann, “Electron Transport in Extremely Scaled SiGe HBTs,” (INVITED PAPER), accepted at BCTM 2009, Capri, Italy.
- Hong, S.-M., Jungemann, C.: Electron Transport in Extremely Scaled SiGe HBTs, BCTM 2009, Capri, Italy (invited)
- Shimukovitch, A., Sakalas, P., Ramonas, M., Schroeter, M., Jungemann, C., Kraus, W.: Modeling of SiGe Heterojunction Bipolar Transistor at Extreme Temperature Environment, ICNF 2009, Pisa, Italy.
- Sasso, G., Matz, G., Jungemann, C., Rinaldi, N.: Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation, SISPAD 2009, San Diego, USA
- M. Costagliola and N. Rinaldi, “Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions,” BCTM 2009, Capri, Italy.
- Pawlak, A., Schroeter, M., Krause, J., Wedel, G., Jungemann, C.: On the feasibility of 500 GHz Silicon-Germanium HBTs, SISPAD 2009, San Diego, USA
- Mahmoud Al-Sa’di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, “Investigation of Electrical BJT Performance Improvement through Extrinsic Stress Layer Using TCAD Modeling”, Semiconductor conference Dresden IEEE SCD 2009. Dresden- Germany April 29 to 30 2009.
- Mahmoud Al-Sa’di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, “TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Extrinsic Stress Layer” , 27th INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2010), 16-19 May 2010, Nis- Serbia (accepted).
ST: “A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400GHz fmax”
P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli, L. Depoyan, G. Troillard, M. Buczko, D. Gloria, D. Céli, C. Gaquière and A. Chantre
Paper accepted for oral presentation at the IEEE-BCTM 2009 Conference (Capri, Oct. 13-14, 2009)
S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, S. You, G. Winderickx, D. Radisic, W. Lee, P. Wong, T. Vanderweyer, N. D. Nguyen, K. De Meyer and S. Decoutere, “A 400 GHz fully self-aligned SiGe:C HBT architecture”, accepted BCTM 2009. S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. Meister, K. Aufinger and M. Schröter, “Advanced process modules and architectures for half-terahertz SiGe:C HBTs”, accepted BCTM 2009. S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. Meister, K. Aufinger and M. Schröter, “Pushing the speed limits of SiGe:C HBTs to 0.5 Terahertz”, accepted CICC 2009. D. Bolze, B. Heinemann, J. Gelpy, F. McCoy, W. Lerch, “Millisecond annealing of high-performance SiGe HBTs”, accepted 17th IEEE RTP 2009
Publications: - M. Schroter, J. Krause, S. Lehmann, D. Celi, “Compact layout and bias dependent base resistance modeling for advanced SiGe HBTs”, IEEE Trans. Electron Devices, Vol. 55, No. 7, pp. 1693-1701, 2008.
- I. Marano, V. d’Alessandro, N. Rinaldi, “Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors”, to be published on Solid-State Electronics.
- Book chapter: M. Schröter and B. Ardouin, “The HiCuM bipolar transistor model”, in G. Gildenblat (ed.), Compact Modeling: Principles, Techniques and Applications, Springer, 2010.
Contributions to workshops, conferences, exhibitions and journals: - C. Raya, D. Celi (ST), T. Zimmer (IMS): Investigation of De-embedding Methods up to 110GHz, 8th European HICUM Workshop, May 20/21, 2008, Böblingen, Germany
- S. Lehmann, M. Schroter, “Improved layout dependent modeling of the base resistance in advanced HBTs”, Proc. WCM, International NanoTech Meeting, Boston, pp. 795-800, 2008.
- Invited paper by F. Pourchon et al., “From Measurement to Intrinsic Device Characteristics: Test Structures and Parasitic Determination”, IEEE BCTM 2008
- "IT parameter extraction issues", Bipolar Arbeitskreis, October 30, 08
M. Schroeter, J. Krause, "IT parameter extraction issues", Bipolar Arbeitskreis, October 2008, Hamburg, Germany. - M. Schroeter, A. Mukherjee, "HICUM - Future Activities", CMC meeting, December 2008, San Francisco CA, USA.
- M. Schroeter, "SiGe heterojunction bipolar transistor compact modeling", invited Tutorial at the Compound Semiconductor Integrated Circuits Symposium, October 2008, Monterey CA, USA.
- B. Ardouin, "Update of XMOD Technologies activities", 8th European HICUM Workshop, May 20/21, 2008, Böblingen, Germany
A. Pawlak, M. Schröter, J. Krause, G. Wedel, „On the feasibility of 500GHz Silicon-Germanium HBTs“, Accepted at SISPAD 2009 - J. Bazzi, C. Raya, A.. Curutchet, T. Zimmer. “Investigation of High Frequency coupling between Probe tips and Wafer surface.”, IEEE BCTM 2009, accepted
- M. Costgliola and N. Rinaldi; Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions, accepted for presentation at BCTM 2009
- D. Celi “An Attempt to Determine the Emitter Size of Bipolar Transistors from Electrical measurements”, HiCuM Workshop 2009, October 23, 2010, Würzburg, Germany
- D. Celi “HICUM/L0 v1.2: Application to Millimeter Wave Devices”, BipAK 2009, October 22, 2010, Würzburg, Germany
- M. Schroter and A. Chakravorty, “Compact hierarchical bipolar transistor modeling with HICUM”, World Scientific, Singapore, in print.
- Pawlak, A.; Schroter, M.; Krause, J.; Wedel, G.; Jungemann, C., “On the Feasibility of 500 GHz Silicon-Germanium HBTs”, Proc. SISPAD, pp. 27-30, 2009.
- J. BAZZI, C. RAYA, A. CURUTCHET, T. ZIMMER, “Investigation of high frequency coupling between Probe tips and Wafer surface”, BCTM09, Oct 2009
- T. Zimmer et al, “Calibration and De-embedding up to 110GHz”, Dotfive seminars, January 18, 2010.
Presentations at workshops: - IEEE Bipolar/BiCMOS Circuits and Technology Meeting, U.Pfeiffer, E.Öjefors Opportunities for Silicon at mmWave and Terahertz Frequencies (Invited), Oct. 2008
- European Microwave Integrated Circuits Conference (EuMIC), E.Öjefors, U. Pfeiffer, A 94-GHz Monolithic Front-End for Imaging Arrays in SiGe:C Technology, P. 422-425, Oct. 2008
- European Microwave Week, U. Pfeiffer, SiGe BiCMOS Circuits for Future mmWave and THz Applications, Modelling, Circuit Design and Measurement Techniques for mm-Wave Systems, WTH-11 Workshop, Amsterdam, October 27-31 2008
- International Microwave Symposium 2008, U. Pfeiffer, Circuit Design Challenges for High-Power mmWave and THz Applications, IMS 2008 Workshop: Advances in Circuit Design for Wideband Millimeter Wave Applications, Atlanta, June 15-20 2008
- Semiconductor Conference Dresden, U. Pfeiffer and Erik Öjefors, High-speed mmWave and THz Circuits in Silicon Process Technologies, 23-24, April 2008 Kulturpalast Dresden 2008
- Analog 08 Tagung, E. Öjefors and U. Pfeiffer, Silicon Based Circuit Design for mm Wave and THz Applications, Siegen, Germany, P. 13-18, Apr. 2008
- U.R.Pfeiffer, E. Öjefors, Y. Zhao, A SiGe Quadrature Transmitter and Receiver Chipset for Emerging High-Frequency Applications at 160 GHz, IEEE International Solid-State Circuits Conference, Feb. 2010, San-Francisco, CA
- Erik Öjefors and Ullrich R. Pfeiffer, A 650 GHz SiGe Receiver Front-End for Terahertz Imaging Arrays, IEEE International Solid-State Circuits Conference, Feb. 2010, San-Francisco, CA
- M. Jahn, A. Stelzer, A. Hamidipour, Highly Integrated 79, 94, 120-GHz SiGe Radar Frontends, (Invited Paper), accepted at IMS 2010, May, Anaheim
Publications: - [1] U.R.Pfeiffer, E. Öjefors, Y. Zhao, “A SiGe Quadrature Transmitter and Receiver Chipset
- for Emerging High-Frequency Applications at 160 GHz”, Submitted to ISSCC 2010
[2] Erik Öjefors and Ullrich R. Pfeiffer, “A 650 GHz SiGe Receiver Front-End for Terahertz Imaging Arrays”, Submitted to ISSCC 2010 - H. Knapp, T. F. Meister, W. Liebl, K. Aufinger, H. Schäfer, J. Böck, S. Boguth, and R. Lachner: “168 GHz Dynamic Frequency Divider in SiGe:C Bipolar Technology“, IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct. 2009, pp. 190–193.
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