People involved in the project
Rudolf Lachner received the diploma and PhD degrees in physics from Technical University Munich, Germany, in 1978 and 1984 respectively. He joined Infineon Technologies in 1984 where he first was engaged in process development and integration of high speed bipolar processes. Later on he took over responsibility for the development of Infineon's leading edge Silicon and Silicon-Germanium bipolar and bicmos processes. As a Senior Principal in the field of RF technologies his main research interests are currently in pushing the limits of SiGe technology into the Terahertz region and paving the way to broad usage of Si based mmwave technology in new safety and communication applications. He has filed several patents and authored or co-authored many publications in this field. 0
Herbert Schäfer received the diploma and the Ph.D degrees in physics from the University of Göttingen, Germany, in 1980 and 1983. He joined Siemens in 1984 where he first worked in the Corporate Research and Development department on III-V semiconductor devices for the optical data communication. Since 1990 he is engaged in the development of fabrication processes for advanced Si technologies. His main focus is Silicon and Silicon-Germanium epitaxy for strained CMOS and hetero bipolar transistors. He holds several patents and authored or co-authored many publications in the field. 0 0
Herbert Knapp received the Diploma and Ph.D. degrees in Electrical Engineering from the Technical University Vienna, Austria, in 1997 and 2000. In 1993 he joined Siemens, Corporate Technology, in Munich, Germany, where he worked on circuits for wireless communications and high-speed data transmission. 0 0 |
