Structure de mise en forme 2 colonnes

General description

STMicroelectronics is a global independent semiconductor company that designs, develops, manufactures and markets a broad range of semiconductor Integrated Circuits and discrete devices used in a wide variety of microelectronic applications, including telecommunications systems, computer systems, consumer products, automotive products and industrial automation and monitoring systems. The company is world leader in: analog ICs, mixed signal ICs, power ICs, MPEG decoder ICs as well as in the domain of non-volatile memories (including smart cards). The 2006 Company turnover (~10 billion $) placed the company as the 5th semiconductor company in the world market ( according to DATAQUEST). The combined worldwide forces of STMicroelectronics is over 50,000 employees, 11 R&D centres, 18 design centres, 13 major production units, over 55 sales offices and 600 distributors and representatives all around the world. ST Microelectronics is thus among the top ten IC manufacturers in the world. ST Microelectronics obtained in the past ten years many awards for its management procedures, its total quality engagements, environment policies. Among the different Production and R&D sites the Crolles site (over 2000 employees) where the DOTFIVE main activities take place, is one of the most advanced of the IC industry worldwide for CMOS and BICMOS logic and mix signal products . The product portfolio manufacture at the site is largely devoted to customers in emerging and fast growing markets like telecommunication, computers and multimedia. To accelerate CMOS technologies development, based on 300mm Wafers, STMicroelectronics has invested in 2002/3 in a new facilities formally named Crolles 2 Alliance. In order to share the risk and the costs, STMicroelectronics SAS, NXP Semiconductor Crolles and FREESCALE have decided to cooperate in the Crolles 2 project. This collaboration between three industrial partners has resulted in the creation a legal entity STMicroelectronics (Crolles 2) SAS, to manage and clarify the financial and legal aspects with the partners, and ensure a split between ST SA proprietary activities and shared activities. ST in Crolles is producing wafers down to 0.18 microns in CMOS logic, BICMOS and others technologies (image sensors...) in 200mm wafers while in the SAS the 0.13µm, 90nm technologies and the 65nm technology are already in the industrial phase, on 300mm wafers. The 45nm technology is in advanced state of development and scheduled to enter in production in 2008 or earlier. The 32nm technology is in an active research phase. The processing engineering teams are already working with the advanced research teams. More details about ST Product worldwide structure, product portfolio, etc are available at the Web site http://www.st.com

Contact: Project Coordinator:

Gilles THOMAS

STMicroelectronics

+33 4 76 92 51 11

Role/activity in the project

In DOTFIVE besides leading the project, STMicroelectronics is involved in all of the activities related to HBT development, characterization, modelling and integration into a manufacturable technology. From this technology circuit designers from other DOTFIVE partners will generate RF demonstrator circuits blocks representative of the elements found in final commercial ICs . The work in DOTFIVE is performed by the teams located at Crolles site.

People involved in the project

Gilles Thomas obtained a Ph D in solid state Physics from University Of Grenoble (France) in 1977. He started his career with Materials Research Corporation (MRC) then moved to Matra-Harris Semiconductors (80-82) and later joined Thomson-CSF in 1982 which later on in 1987 became STMicroelectronics (merger with SGS-ATES). Since 1982 he has held various positions in R & D (BICMOS technology development) and manufacturing fabs of ST in Europe (Grenoble and Crolles), USA (Carrollton TX 95-02), and recently as Technical Director of AMK6 fab in Singapore (2004-2005). He has authored several papers in international journals and holds 7 patents.

Alain Chantre received the engineering degree in physics from the Institut National des Sciences Appliquées de Lyon, France, in 1976, and the Ph.D. degree from the Université Scientifique et Médicale de Grenoble, France, in 1979. His doctoral research concerned deep level optical spectroscopy (DLOS) in GaAs. He joined the Centre National d'Etudes des Télécommunications (CNET), Grenoble, in 1979. He worked from 1979 to 1985 at the CNET Grenoble laboratory and during 1985-1986 at AT&T Bell Laboratories, Murray Hill, NJ, on deep level defects in silicon. From 1986 to 1992, he was in charge of a group working on the characterization of advanced silicon processes and devices. From 1993 to 1999, he has been working within the GRESSI consortium between France Telecom CNET and CEA-LETI, as head of a group involved in the development of advanced bipolar devices for submicron BiCMOS technologies. He joined ST Microelectronics, Crolles, in 2000, where he is currently managing the development of advanced SiGe bipolar devices and technology for RF and optical communications applications. He has published about 150 technical papers related to his research, and holds 20 patents.

Didier Céli graduated from Ecole Supérieure d’Electricité in 1981. In 1982 he joined the semiconductor division of Thomson-CSF, then after the central R&D of SGS-Thomson Microelectronic, now ST Microelectronics, Crolles (France). He has worked in the field of modeling for advanced Bipolar and BiCMOS technologies, including model development, parameter measurement and extraction tools. Presently, he is responsible for BiCMOS device modeling as project manager. D. Céli was member of the CAD/Modeling subcommittee of IEEE Bipolar/BiCMOS and Technology Meeting (BCTM) from 1998-2004. He has authored or co-authored several technical papers related to his research.

Thierry Schwartzmann received the Ph.D. in physics from the University of Dijon (France) in January 1995. After two years of teaching in the fields of physics and electronics he joined STMicroelectronics (ST) in 1996 in the Central R&D Technology Modeling group where he was in charge of technology and device simulations for the advanced BiCMOS technologies. He has been involved as technical expert in the European project PROMPT-II (ESPRIT 24038) and as WP leader in the project MAGIC_FEAT (IST-1999-11433). He is now acting as technology modeling expert in the Modeling group (ST, Crolles site) where he is responsible for the TCAD modeling activity which supports the development of advanced HBT devices.

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