Dotfive
Structure de mise en forme 2 colonnes
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  1. FolderDOTFIVE concept and Innovation 
    1. PagePublic support 
  2. FolderDOTFIVE Partners 
    1. PageST SA - ST SAS 
    2. PageIFX 
    3. PageIMEC 
    4. PageIHP GmbH 
    5. PageIMS 
    6. PageTUD 
    7. PageUoS  
    8. PageJKU 
    9. PageBU 
    10. PageUN 
    11. PageUPS 
    12. PageXMOD 
    13. PageAlma 
    14. PageUoW  
  3. FolderWork Description 
    1. FolderWP1 - TCAD and physics-based predictive modeling 
      1. PageFirst results of the WP1 
      2. PageWP1 results for the year 1 
      3. PageWP1 results for M18 
      4. PageWP1 results for the year 2 
    2. FolderWP2 - Evolutionary SiGe technology 
      1. PageWP2 results for the year 1  
      2. PageWP2 results for M18 
      3. PageWP2 results for the year 2 
    3. FolderWP3 - Advanced SiGe HBT process modules and architectures 
      1. PageWP3 results for the year 1  
      2. PageWP3 results for M18 
      3. PageWP3 results for the year 2 
    4. FolderWP4 - Device and compact modelling, device characterization 
      1. PageWP4 results for M18 
      2. PageWP4 results for the year 2 
    5. FolderWP5 - Applications and technology benchmarking 
      1. PageWP5 results for the year 2 
    6. PageWP6 - Training and dissemination 
    7. PageWP7 - Management 
  4. PageNews 
  5. PagePublications 
  6. FolderVideos 
    1. Page01. Physics based device simulation  
    2. Page02. SiGe HBT processes: overview on present state-of-the-art and future trends 
    3. Page03. Advanced isolation in high-speed BiCMOS 
    4. Page04. SiGe HBT model parameter prediction from TCAD simulation 
    5. Page05. Advanced circuits and systems for future THz applications 
    6. Page01. Performance and safe operating limits of SiGe HBTs Nicolo Rinaldi - University of Naples  
    7. Page02. Advanced Si/SiGe epitaxial deposition processes for ultra high speed SiGe HBTs Herbert Schaefer – Infineon 
    8. Page03. Profile engineering for high speed BiCMOS Stefaan Decoutere - IMEC 
    9. Page04. De-embedding methods: getting rid of back-end parasitics Thomas Zimmer – IMS Bordeaux 
    10. Page05. Circuit building blocks for future 0.5 THz silicon technologies Ullrich Pfeiffer - University of Wuppertal