General description

IHP GmbH - Innovations for High-Performance Microelectronics is a public funded German research institute located in Frankfurt (Oder) in Germany. With 200 employees and around 26 Mio EUR annual turn-over for operation cost and invest.

IHP is dedicated to innovative solutions for wireless and broadband communication systems by close co-work of competent teams working in the fields of material research, process technology, circuit design, and systems. IHP owns a 1000 square meter, class-1 clean room and pilot line with production-grade tool-set for 0.25 and 0.13 µm technologies and offers its CMOS and SiGe BiCMOS technologies for Multi Project Wafer service and low-volume prototyping to external customers, also via Europractice. IHP’s SiGe BiCMOS technologies are tailored for high-performance, moderate-cost applications featuring up to 200 GHz fmax/fT in 0.25 µm node and >250 GHz fmax/fT in 0.13 µm node.

Role/activity in the project

In collaboration with IMEC, IHP is working in WP3 on advanced or novel process modules and device architectures that have shown promising initial results. They address key aspects of the HBT in the areas of collector isolation, profile optimization, and emitter/base architectures. The key objective of WP3 is to explore and develop process modules and architectures that have the potential to improve HBT performance well beyond the present state-of-the-art as 0.5 THz.

Contact: Bernd Heinemann

IHP Im Technologiepark 25,

D-15234 Frankfurt (Oder)

+49 335 5625 147

Fax: +49 335 5625 327

People involved in the project


From left to right: Bernd Heinemann, Alexander Fox, Steffen Marschmeyer, Detlef Bolze, Bernd Tillack

Bernd Heinemann received the M.S. degree in physics from the Humboldt University zu Berlin, Germany, in 1984, and the Dr.-Ing. degree in electrical engineering from the Technische Universität Berlin, Germany, in 1997. He joined the IHP in Frankfurt (Oder), Germany in 1984. His research activities include the development and characterization of MOS and bipolar devices. Since 1993 he is a member of a team working on the exploration and technological implementation of SiGe HBTs.

Alexander Fox received the Diploma degree in electrical engineering from the RWTH Technical University Aachen, Germany, in 1999, and the Ph.D. degree in engineering sciences from the Christian-Albrechts-Universität Kiel, Germany, in 2006. In 2000, he joined the IHP in Frankfurt, Germany, as a Research Assistant in the Process Integration Group, where he has been working on general integration issues of a 0.25µm BiCMOS technology and on the integration of an Embedded Flash memory module into a SiGe:C BiCMOS baseline technology.

Bernd Tillack received the Ph.D. degree in photochemistry from the University Halle-Merseburg in 1980. In 1981 he joined the IHP Frankfurt (Oder), Germany as a staff member of the process technology. He had been the project leader of different IHP Si and SiGe technology projects. His current fields of research are Si and SiGe epitaxy and the application for heterodevices and atomic layer processing. He is in charge of the Si/SiGe process and device technology in the IHP.

Recent publication

H. Rücker, B. Heinemann, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, K. Köpke, B. Kuck, A. Mai, S. Marschmeyer, T. Morgenstern, H. H. Richter, P. Schley, D. Schmidt, K. Schulz, B. Tillack, G. Weidner, W. Winkler, D. Wolansky, H.-E. Wulf, and Y. Yamamototo, “130 nm SiGe BiCMOS Technology with 3.0 ps Gate Delay ", IEDM 2007, p. 651.