General description

IMEC is a world-leading independent research center in nanoelectronics and nanotechnology. Its research focuses on the next generations of chips and systems, and on the enabling technologies for ambient intelligence. IMEC’s research bridges the gap between fundamental research at universities and technology development in industry. Its unique balance of processing and system know-how, intellectual property portfolio, state-of-the-art infrastructure and its strong network of companies, universities and research institutes worldwide position IMEC as a key partner for shaping technologies for future systems.
IMEC is headquartered in Leuven, Belgium, has a sister company in the Netherlands, IMEC Nederland, concentrating on wireless autonomous transducer solutions, and has representatives in the US, China and Japan. Its staff of more than 1500 people includes more than 500 industrial residents and guest researchers. In 2006, its estimated revenue (P&L) was EUR 231 million.

Role/activity in the project

IMEC will take on the role of WP leader for WP3 and lead the activities on advanced process modules and architectures, and contribute to the TCAD activities of WP1. The key role of IMEC in DOTFIVE is to explore alternative advanced process modules, including the supporting TCAD, to find means to boost HBT performance and to make justified decisions on optimal device architecture.

Contact: Stefaan Decoutere

+32 16 281503

IMEC

IMEC will also be responsible for training aspects in the project.

DOTFIVE will allow IMEC to strengthen its background on advanced SiGeC HBT technology. The experience gained will allow IMEC to continue supporting major European silicon manufacturers, SMEs and foundries. This know-how will trigger further R&D cooperation with European and world-wide industry.

People involved in the project

Stefaan Decoutere (MSc degree in Electrical Engineering in 1986 and PhD degree in 1992 at KU-Leuven, Belgium)). He Joined IMEC in 1987, where he was active in high-voltage BCD technology development. From 1992 to 1997, he was in charge of the development of high-speed BiCMOS technologies and SiGe HBT technologies. Since 1998, he has been the head of the Mixed-Signal/RF technology group at IMEC. He has been/is the project coordinator of the IST projects IMPACT and NANO-RF respectively on 90nm RF CMOS and 45nm RFCMOS.

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Bart De Mey is the head of the Microelectronics Training Center of IMEC. He has been involved in microelectronics training programs since 1983, when he pioneered setting up a training and support infrastructure for 16 Flemish academia. He was one of the initial team members setting up the Eurochip FP3-project (350+ universities) that since then evolved into the Europractice service (FP4-5-6) now serving 600+ European academia. He has been applying high-resolution multimedia technology to distribute training material for several European Integrated projects (FP6), and headed the team that developed the web-based training material on process technology (1300+ screens and 250+ assessment questions) in the E-LIMM project (FP5). He has been in charge of an ASIC design team for many years and designed integrated circuits for medical implants.

Recent publication

Van Huylenbroeck, S.; Choi, L.J.; Sibaja-Hernandez, A.; Piontek, A.; Linten, D.; Dehan, M.; Dupuis, O.; Carchon, G.; Vleugels, F.; Kunnen, E.; Leray, P.; Devriendt, K.; Shi, X.P.; Loo, R.; Hijzen, E.; Decoutere, S., “A 205/275GHz fT/fmax Airgap Isolated 0.13µm BiCMOS Technology featuring on-chip High Quality Passives”, Bipolar/BiCMOS Circuits and Technology Meeting, 2006

L.J. Choi , E. Kunnen , S. Van Huylenbroeck , A. Piontek , A. Sibaja-Hernandez, F. Vleugels, T. Dupont, P. Leray, K. Devriendt, X.P. Shi, R. Loo, S. Vanhaelemeersch and S. Decoutere, “A Novel Deep Trench Isolation featuring Airgaps for a High-Speed 0.13µm SiGe:C BiCMOS Technology”, in VLSI-TSA Proceedings, 2006, pp. 88-89.

L. J. Choi, S. Van Huylenbroeck, A. Piontek, A. Sibaja-Hernandez, E. Kunnen , P. Meunier-Beillard , W.D van Noort, E. Hijzen and S. Decoutere, “On the use of a SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs”, in IEEE Electron Device Letters, Volume 28, Issue 4, April 2007 Page(s):270 - 272.

Donkers, J.J.T.M. Kramer, M.C.J.C.M. Van Huylenbroeck, S. Choi, L.J. Meunier-Beillard, P. Sibaja-Hernandez, A. Boccardi, G. van Noort, W. Hurkx, G.A.M. Vanhoucke, T. Vleugels, F. Wmderickx, G. Kunnen, E. Peeters, S. Baute, D. De Vos, B. Vandeweyer, T. Loo, R. Venegas, R. Pijper, R. Voogt, F.C. Decoutere, S. Hijzen, E.A. , “A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process”, IEDM Technical Digest, pp. 655-658, 2007.